Simulation of Partially Depleted SOI MOSFETs using an Improved Hydrodynamic Transport Model
نویسندگان
چکیده
An anomalous output characteristics is observed in hydrodynamic simulations of partially depleted SOI MOSFETs. The effect that the drain current reaches a maximum and then decreases is peculiar to the hydrodynamic transport model. It is not present in drift-diffusion simulations and its occurance in measurements is questionable. An explanation of the cause of this effect is given, and a solution is proposed by modifying the hydrodynamic transport model.
منابع مشابه
Revision of the Standard Hydrodynamic Transport Model for SOI Simulation
Anomalous output characteristics are observed in hydrodynamic simulations of partially depleted SOI MOSFETs. The effect that the drain current reaches a maximum and then decreases is peculiar to the hydrodynamic transport model. It is not observed in drift-diffusion simulations and its occurance in measurements is questionable. An explanation of the cause of this effect is given and a solution ...
متن کاملA Simulation Study of Partially Depleted Soi Mosfets
We report on anomalous output characteristics observed in hydrodynamic simulations of partially depleted SOI MOSFETs. The effect that the drain current reaches a maximum and then decreases is peculiar to the hydro-dynamic transport model. It is not present in drift-diffusion simulations and its occurance in measurements is questionable. The problem is investigated under various conditions and a...
متن کاملAn Improved Energy Transport Model Suitable for Simulation of Partially Depleted SOI MOSFETs
When applied to partially depleted SOI MOSFETs, the energy transport model predicts anomalous output characteristics. The effect that the drain current reaches a maximum and then decreases is peculiar to the energy transport model. It is not present in drift-diffusion simulations and its occurrence in measurements is questionable. The effect is due to an overestimation of the diffusion of chann...
متن کاملHiSIM-SOI: SOI-MOSFET Model for Circuit Simulation Valid also for Device Optimization
Circuit simulation model for advanced SOI-MOSFETs has been developed by solving Poisson’s equation consistently. It is successfully proven that, as a result of solving the Poisson’s equation considering its device structure, our model is applicable for various variations of SOI-MOSFETs such as partially depleted (PD), fully depleted (FD) and dynamically depleted SOI-MOSFETs, which is the indisp...
متن کاملStress-Induced Capacitance of Partially Depleted MOSFETs from Ring Oscillator Delay
In the current study, stress-induced capacitance determined by direct measurement on MOSFETs was compared with that determined by indirect simulation through the delay of CMOS ring oscillators (ROs) fabricated side by side with MOSFETs. External compressive stresses were applied on 〈110〉 silicon-on-insulator (SOI) n-/p-MOSFETs with the ROs in a longitudinal configuration. The measured gate capa...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2002